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RN1114MFV to RN1118MFV
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN1114MFV, RN1115MFV, RN1116MFV, RN1117MFV, RN1118MFV
Switching Applications Inverter Circuit Applications Interface Circuit Applications Driver Circuit Applications
Unit: mm
With built-in bias resistors Simplify circuit design Reduce a quantity of parts and manufacturing process Complementary to RN2114MFV to RN2118MFV
Equivalent Circuit and Bias Resister Values
Type No.
RN1114MFV RN1115MFV RN1116MFV RN1117MFV RN1118MFV
R1 (kΩ)
1 2.2 4.7 10 47
R2 (kΩ)
10 10 10 4.7 10
Absolute Maximum Ratings (Ta = 25°C)
VESM
1.BASE 2.EMITTER 3.COLLECTOR
JEDEC
―
JEITA
―
TOSHIBA
1-1Q1S
Weight: 1.5 mg (typ.