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RN1105 - Silicon NPN Epitaxial Type Transistors

Download the RN1105 datasheet PDF. This datasheet also covers the RN1101 variant, as both devices belong to the same silicon npn epitaxial type transistors family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2101 to RN2106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.7 10 22 47 47.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (RN1101-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN1105
Manufacturer Toshiba
File Size 879.54 KB
Description Silicon NPN Epitaxial Type Transistors
Datasheet download datasheet RN1105 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RN1101 to RN1106 Bipolar Transistors Silicon NPN Epitaxial Type (PCT Process)(Bias Resistor built-in Transistor) RN1101/02/03/04/05/06 1. Applications • Switching • Inverter Circuits • Interfacing • Driver Circuits 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) The integrated bias resistor reduces the number of external parts required, making it possible to reduce system size and assembly time. (3) Toshiba offers transistors with a wide range of resistance to accommodate various circuit designs. (4) Complementary to RN2101 to RN2106 3. Equivalent Circuit 4. Bias Resistor Values Part No. RN1101 RN1102 RN1103 RN1104 RN1105 RN1106 R1 (kΩ) 4.7 10 22 47 2.2 4.7 R2 (kΩ) 4.