HN4B06J Datasheet, Toshiba

HN4B06J transistor equivalent, silicon npn/pnp epitaxial type transistor.

HN4B06J

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HN4B06J Datasheet

Application

Unit: mm Q1: z High voltage : VCEO = −120V z High hFE : hFE = 200 to 700 z Excellent hFE linearity : hFE (IC = −0.1mA).

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Manufacturer

Toshiba (https://www.toshiba.com/)

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