HN1B04FU
Overview
- Q2 Features (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.)
- Q1, Q2 Common Features (1) AEC-Q101 qualified (Please see the orderable part number list)
- Packaging and Internal Circuit HN1B04FU US6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021-2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 1992-10
