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HN1B04FE Datasheet, Toshiba

HN1B04FE transistor equivalent, silicon pnp/npn epitaxial type transistor.

HN1B04FE Avg. rating / M : 1.0 rating-11

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HN1B04FE Datasheet

Features and benefits

(1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) .

Application


* Low-Frequency Amplifiers 2. Q1 Features (1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max.

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HN1B04FE Page 1 HN1B04FE Page 2 HN1B04FE Page 3

TAGS
HN1B04FE
Silicon
PNP
NPN
Epitaxial
Type
Transistor
HN1B04FU
HN1B01F
HN1B01FDW1T1
Toshiba
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