• Part: HN1B04FE
  • Description: Silicon PNP/NPN Epitaxial Type Transistor
  • Manufacturer: Toshiba
  • Size: 502.95 KB
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Datasheet Summary

Bipolar Transistors Silicon PNP/NPN Epitaxial Type 1. Applications - Low-Frequency Amplifiers 2. Q1 Features (1) High voltage: VCEO = 50 V (2) High collector current: IC = 150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 3. Q2 Features (1) High voltage: VCEO = -50 V (2) High collector current: IC = -150 mA (max) (3) High hFE: hFE = 120 to 400 (4) Excellent hFE linearity: hFE (IC = -0.1 mA)/hFE (IC = -2 mA) = 0.95 (typ.) 4. Q1, Q2 mon Features (1) AEC-Q101 qualified (Please see the orderable part number list) 5. Packaging and Internal Circuit ES6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5:...