HN1B01F
HN1B01F is Silicon PNP/NPN Transistor manufactured by Toshiba.
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Q1:
- High voltage and high current : VCEO =
- 50 V, IC =
- 150 m A (max)
- High h FE : h FE = 120 to 400
- Excellent h FE linearity
: h FE (IC =
- 0.1 m A) / h FE (IC =
- 2 m A) = 0.95 (typ.)
Q2:
- High voltage and high current : VCEO = 50 V, IC = 150 m A (max)
- High h FE : h FE = 120 to 400
- Excellent h FE linearity
: h FE (IC = 0.1 m A) / h FE (IC = 2 m A) = 0.95 (typ.)
Q1 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current
Symbol
VCBO VCEO VEBO
IC IB
Rating
Unit
- 50
- 50
- 5
- 150 m A
- 50 m A
JEDEC JEITA TOSHIBA Weight: 0.015 g (typ.)
― ―
2-3N1A
Q2 Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base...
