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HN1B01F
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process)
HN1B01F
Audio Frequency General Purpose Amplifier Applications
Unit: mm
Q1:
High voltage and high current : VCEO = −50 V, IC = −150 mA (max)
High hFE : hFE = 120 to 400 Excellent hFE linearity
: hFE (IC = −0.1 mA) / hFE (IC = −2 mA) = 0.95 (typ.)
Q2:
High voltage and high current : VCEO = 50 V, IC = 150 mA (max)
High hFE : hFE = 120 to 400 Excellent hFE linearity
: hFE (IC = 0.1 mA) / hFE (IC = 2 mA) = 0.95 (typ.
HN1B01F Datasheet
