GT5G134 igbt equivalent, silicon n-channel igbt.
(1) Enhancement mode (2) High-speed switching: tf = 0.6 µs (typ.) (IC = 110 A) (3) 4-V gate drive voltage: VGE = 4.0 V (min) (@IC = 110 A) (4) Peak collector current: ICP.
* Dedicated to Photo-Flash Intensity Control Applications
* Dedicated to High-Speed-Switching Photo Flash Applic.
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