(1) Sixth generation (2) Enhancement mode (3) High-speed switching: IGBT tf = 0.11 µs (typ.) (IC = 60 A) FRD trr = 0.8 µs (typ.) (di/dt = -20 A/µs) (4) Low saturation vol.

* Dedicated to Voltage-Resonant Inverter Switching Applications Note: The product(s) described herein should not be .

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts