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GT50J342 Datasheet, Toshiba

GT50J342 igbt equivalent, silicon n-channel igbt.

GT50J342 Avg. rating / M : 1.0 rating-12

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GT50J342 Datasheet

Features and benefits

(1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A) (3) High junction temperature: Tj = 175 (max) (4) FRD included between emitter and c.

Application


* Motor Drivers 2. Features (1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.5 V (typ.) (IC = 50 A) (3).

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TAGS

GT50J342
Silicon
N-Channel
IGBT
Toshiba

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