GT50J123 igbt equivalent, silicon n-channel igbt.
(1) Sixth generation (2) Low saturation voltage: VCE(sat) = 1.9 V (typ.) (IC = 50 A, Ta = 25 ) (3) High junction temperature: Tj = 175 (max)
3. Packaging and Internal C.
* Hard Switching
* High-Speed Switching
* Power Factor Correction (PFC)
2. Features
(1) Sixth generation (2).
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