GT30J122A igbt equivalent, silicon n-channel igbt.
(1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)
3. Pac.
* Dedicated to Current-Resonant Inverter Switching Applications
* Dedicated to Partial-Switching Power Factor Co.
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