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DF2B7ASL - ESD Protection Diodes

Features

  • (1) Suitable for use with a 5 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.2 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 11 V@IPP = 4 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 mm.

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Datasheet Details

Part number DF2B7ASL
Manufacturer Toshiba
File Size 344.12 KB
Description ESD Protection Diodes
Datasheet download datasheet DF2B7ASL Datasheet

Full PDF Text Transcription

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ESD Protection Diodes Silicon Epitaxial Planar DF2B7ASL DF2B7ASL 1. General The DF2B7ASL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B7ASL provides low dynamic resistance and superior protective performance. Furthermore, the DF2B7ASL is housed in an ultra-compact package (0.62 mm × 0.32 mm) to meet applications that require a small footprint. 2. Applications Mobile Equipment  Smartphones  Tablets  Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation. 3.
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