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Schottky Barrier Diode Silicon Epitaxial
CTS05S30
1. Applications
• High-Speed Switching
2. Packaging and Internal Circuit
CTS05S30
1: Cathode 2: Anode
CST2
3. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol Note
Rating
Unit
Peak reverse voltage
VRM
30 V
Reverse voltage
VR 20
Average rectified current
IO (Note 1)
0.5
A
Non-repetitive peak forward surge current
IFSM (Note 2)
2
Junction temperature
Tj 125
Storage temperature
Tstg -55 to 125
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
CTS05S30 Datasheet
