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CCS15S30 - Schottky Barrier Diode

Key Features

  • (1) Low forward voltage: VF(1) = 0.33 V (typ. ) 3. Packaging and Internal Circuit CCS15S30 1: Cathode 2: Anode CST2C 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.5 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously.

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Datasheet Details

Part number CCS15S30
Manufacturer Toshiba
File Size 137.13 KB
Description Schottky Barrier Diode
Datasheet download datasheet CCS15S30 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Schottky Barrier Diode Silicon Epitaxial CCS15S30 1. Applications • High-Speed Switching 2. Features (1) Low forward voltage: VF(1) = 0.33 V (typ.) 3. Packaging and Internal Circuit CCS15S30 1: Cathode 2: Anode CST2C 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Peak reverse voltage VRM 30 V Reverse voltage VR 20 Average rectified current IO (Note 1) 1.5 A Non-repetitive peak forward surge current IFSM (Note 2) 5 Junction temperature Tj 125  Storage temperature Tstg -55 to 125 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.