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TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process)
2SC5356
2SC5356
High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications
Unit: mm
• Excellent switching times: tf = 0.5 μs (max) (IC = 1.2 A) • High collectors breakdown voltage: VCEO = 800 V • High DC current gain: hFE = 15 (min) (IC = 0.15 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC Pulse
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
Junction temperature
Storage temperature range
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
900 800
7 3 5 1 1.5 25 150 −55 to 150
V V V
A
A
W
°C °C
Note: Using continuously under heavy loads (e.g.
C5356 Datasheet
