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C5200 - Silicon NPN Transistor

C5200 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5200 Power Amplifier Applications 2SC5200 Unit: mm * High breakdown voltage: VCEO = 2.

C5200 Applications

* 2SC5200 Unit: mm
* High breakdown voltage: VCEO = 230 V (min)
* Complementary to 2SA1943
* Suitable for use in 100-W high fidelity audio amplifier’s output stage Maximum Ratings (Tc = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base volt

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Datasheet Details

Part number
C5200
Manufacturer
Toshiba ↗
File Size
179.69 KB
Datasheet
C5200_Toshiba.pdf
Description
Silicon NPN Transistor

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Silicon NPN Transistor Toshiba
Toshiba C5200-like datasheet