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TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5089
2SC5089
VHF~UHF Band Low Noise Amplifier Applications
• Low noise figure, high gain. • NF = 1.1dB, |S21e|2 = 13dB (f = 1 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 20 V
Collector-emitter voltage
VCEO 10 V
Emitter-base voltage
VEBO 1.5 V
Base current
IB 20 mA
Collector current
IC 40 mA
Collector power dissipation
PC 150 mW
Junction temperature
Tj 125 °C
Storage temperature range
Tstg
−55 to 125
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
C5089 Datasheet
