900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

C4781 Datasheet

2SC4781

No Preview Available !

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC4781
Strobe Flash Applications
Medium Power Amplifier Applications
2SC4781
Unit: mm
High DC current gain and Excellent hFE linearity
: hFE (1) = 200 to 600 (VCE = 2 V, IC = 1 A)
: hFE (2) = 300 (typ.) (VCE = 2 V, IC = 4 A)
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 4 A, IB = 80
mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulsed
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCES
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
30
30
10
6
4
8
0.8
900
150
55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-5J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1
http://store.iiic.cc/
2006-11-10


Toshiba Electronic Components Datasheet

C4781 Datasheet

2SC4781

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE
fT
Cob
VCB = 30 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 1 A
VCE = 2 V, IC = 4 A
IC = 4 A, IB = 80 mA
VCE = 2 V, IC = 4 A
VCE = 2 V, IC = 0.5 A
VCB = 10 V, IE = 0, f = 1 MHz
Marking
C4781
Part No. (or abbreviation code)
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2SC4781
Min Typ. Max Unit
― ― 100 nA
― ― 100 nA
10 ― ―
V
200 600
140 300
0.28 0.5
V
1.0 1.5
V
170 MHz
50 pF
2
http://store.iiic.cc/
2006-11-10


Part Number C4781
Description 2SC4781
Maker Toshiba
PDF Download

C4781 Datasheet PDF






Similar Datasheet

1 C4781 2SC4781
Toshiba
2 C4783 2SC4783
NEC





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy