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C4541 - 2SC4541

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Datasheet Details

Part number C4541
Manufacturer Toshiba
File Size 168.06 KB
Description 2SC4541
Datasheet download datasheet C4541 Datasheet
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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4541 Power Amplifier Applications Power Switching Applications 2SC4541 Unit: mm • Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1.5 A) • High speed switching time: tstg = 0.5 μs (typ.) • Small flat package • PC = 1.0 to 2.0 W (mounted on a ceramic substrate) • Complementary to 2SA1736 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC PC (Note 1) Tj Tstg 80 50 6 3 0.6 500 1000 150 −55 to 150 V V V A A mW mW °C °C JEDEC ― JEITA SC-62 TOSHIBA 2-5K1A Weight: 0.
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