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Toshiba Electronic Components Datasheet

C4540 Datasheet

2SC4540

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications
Power Switching Applications
2SC4540
Unit: mm
Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 mA)
High speed switching time: tstg = 0.4 µs (typ.)
Small flat package
PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
Complementary to 2SA1735
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note)
80
50
6
1
0.2
500
1000
Junction temperature
Storage temperature range
Tj 150
Tstg 55 to 150
Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Unit
V
V
V
A
A
mW
mW
°C
°C
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2004-07-07


Toshiba Electronic Components Datasheet

C4540 Datasheet

2SC4540

No Preview Available !

2SC4540
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 80 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 100 mA
VCE = 2 V, IC = 700 mA
IC = 500 mA, IB = 25 mA
IC = 500 mA, IB = 25 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
― ― 0.1 µA
― ― 0.1 µA
50 ― ―
V
120 400
40 ― ―
― ― 0.5 V
― ― 1.2 V
100 MHz
10 pF
Turn-on time
Switching time
Storage time
Fall time
ton OUTPUT 0.1
20 µs INPUT IB1
tstg
IB1
IB2
IB2
25 V
0.4
µs
IB1 = IB2 = 35 mA,
tf DUTY CYCLE 1%
0.1
Marking
Part No. (or abbreviation code)
KC
Lot No.
A line indicates
lead (Pb)-free package or
lead (Pb)-free finish.
2 2004-07-07


Part Number C4540
Description 2SC4540
Maker Toshiba
PDF Download

C4540 Datasheet PDF






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