C4540
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4540
Power Amplifier Applications Power Switching Applications
2SC4540
Unit: mm
- Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 500 m A)
- High speed switching time: tstg = 0.4 µs (typ.)
- Small flat package
- PC = 1.0 to 2.0 W (mounted on a ceramic substrate)
- plementary to 2SA1735
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation
Collector power dissipation
VCBO VCEO VEBO
IC IB PC PC
(Note)
80 50 6 1 0.2 500
Junction temperature Storage temperature range
Tj 150 Tstg
- 55 to 150
Note: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Unit
V V V A A m W m W
°C °C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2004-07-07
2SC4540
Electrical Characteristics (Ta = 25°C)
Characteristics Collector cut-off current Emitter cut-off current...
