C4539 - 2SC4539

Toshiba

Datasheet Details

Part number	C4539
Manufacturer	Toshiba
File Size	120.62 KB
Description	2SC4539
Datasheet	C4539 Datasheet
Additional preview pages of the C4539 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4539 Power Amplifier Applications Power Switching Applications 2SC4539 Unit: mm · Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA) · High speed switching time: tstg = 0.3 µs (typ.) · Small flat package · PC = 1.0 to 2.0 W (mounted on ceramic substrate) · Complementary to 2SA1743 Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Collector power dissipation VCBO VCEO VEBO IC IB PC PC (Note) 50 30 6 1.2 0.3 500 1000 Junction temperature Storage temperature range Tj 150 Tstg −55 to 150 Note: Mounted on ceramic substrate (250 mm2 × 0.

Published: Jun 10, 2015 |