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Toshiba Electronic Components Datasheet

C4539 Datasheet

2SC4539

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4539
Power Amplifier Applications
Power Switching Applications
2SC4539
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA)
· High speed switching time: tstg = 0.3 µs (typ.)
· Small flat package
· PC = 1.0 to 2.0 W (mounted on ceramic substrate)
· Complementary to 2SA1743
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note)
50
30
6
1.2
0.3
500
1000
Junction temperature
Storage temperature range
Tj 150
Tstg 55 to 150
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit
V
V
V
A
A
mW
mW
°C
°C
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2002-08-13


Toshiba Electronic Components Datasheet

C4539 Datasheet

2SC4539

No Preview Available !

2SC4539
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
IEBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
fT
Cob
VCB = 50 V, IE = 0
VEB = 6 V, IC = 0
IC = 10 mA, IB = 0
VCE = 2 V, IC = 100 mA
VCE = 2 V, IC = 1.0 A
IC = 700 mA, IB = 35 mA
IC = 700 mA, IB = 35 mA
VCE = 2 V, IC = 100 mA
VCB = 10 V, IE = 0, f = 1 MHz
Min Typ. Max Unit
 0.1 µA
  0.1 µA
30 ― ―
V
120  400
40 ― ―
― ― 0.5 V
 1.2
V
 100 MHz
 10 pF
Turn-on time
Switching time
Storage time
Fall time
ton OUTPUT 0.1
20 µs INPUT IB1
tstg
IB1
IB2
IB2
14 V
 0.3
µs
IB1 = IB2 = 35 mA,
tf DUTY CYCLE 1%
 0.1
Marking
Type name
KB
2 2002-08-13


Part Number C4539
Description 2SC4539
Maker Toshiba
PDF Download

C4539 Datasheet PDF






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