TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4539
Power Amplifier Applications
Power Switching Applications
2SC4539
Unit: mm
· Low saturation voltage: VCE (sat) = 0.5 V (max) (IC = 700 mA)
· High speed switching time: tstg = 0.3 µs (typ.)
· Small flat package
· PC = 1.0 to 2.0 W (mounted on ceramic substrate)
· Complementary to 2SA1743
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Collector power dissipation
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note)
50
30
6
1.2
0.3
500
1000
Junction temperature
Storage temperature range
Tj 150
Tstg −55 to 150
Note: Mounted on ceramic substrate (250 mm2 × 0.8 t)
Unit
V
V
V
A
A
mW
mW
°C
°C
JEDEC
―
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
1 2002-08-13
