TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4118
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
2SC4118
Unit: mm
• Excellent hFE linearity: hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
• Complementary to 2SA1588
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 35 V
Collector-emitter voltage
VCEO 30 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 500 mA
Base current
IB 50 mA
Collector power dissipation
Junction temperature
Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
−55~125
°C
JEDEC
JEITA
―
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01
