900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

C4118 Datasheet

2SC4118

No Preview Available !

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4118
Audio Frequency Low Power Amplifier Applications
Driver Stage Amplifier Applications
Switching Applications
2SC4118
Unit: mm
Excellent hFE linearity: hFE (2) = 25 (min) (VCE = 6 V, IC = 400 mA)
Complementary to 2SA1588
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 35 V
Collector-emitter voltage
VCEO 30 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 500 mA
Base current
IB 50 mA
Collector power dissipation
Junction temperature
Storage temperature range
PC 100 mW
Tj 125 °C
Tstg
55~125
°C
JEDEC
JEITA
SC-70
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2E1A
temperature/current/voltage and the significant change in
Weight: 0.006 g (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
1 2007-11-01


Toshiba Electronic Components Datasheet

C4118 Datasheet

2SC4118

No Preview Available !

2SC4118
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter voltage
Transition frequency
Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
hFE (1) (Note) VCE = 1 V, IC = 100 mA
hFE (2) (Note) VCE = 6 V, IC = 400 mA
VCE (sat) IC = 100 mA, IB = 10 mA
VBE VCE = 1 V, IC = 100 mA
fT VCE = 6 V, IC = 20 mA
Cob VCB = 6 V, IE = 0, f = 1 MHz
Note: hFE (1) classification O(O): 70~140, Y(Y): 120~240, GR(G): 200~400 (
hFE (2) classification O: 25 (min), Y: 40 (min), GR: 70 (min)
Min Typ. Max
⎯ ⎯ 0.1
⎯ ⎯ 0.1
70 400
25 ⎯ ⎯
0.1 0.25
0.8 1.0
300
7
) Marking Symbol
Unit
μA
μA
V
V
MHz
pF
2 2007-11-01


Part Number C4118
Description 2SC4118
Maker Toshiba
PDF Download

C4118 Datasheet PDF






Similar Datasheet

1 C4110 2SC4110
Sanyo
2 C4111 Power Transistors
Panasonic Semiconductor
3 C4112 Transistor
ETC
4 C4113 2SC4113
Sanyo
5 C4115 2SC4115
Jiangsu
6 C4115E 2SC4115E
Jiangsu Changjiang Electronics
7 C4115S 2SC4115S
Jiangsu Changjiang Electronics
8 C4116 2SC4116
Toshiba
9 C4117 2SC4117
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z



Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy