2SC4117
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4117
Audio Frequency General Purpose Amplifier Applications
• High voltage: VCEO = 120 V
• Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
• High hFE: hFE = 200~700
• Low noise: NF = 1dB (typ.), 10dB (max)
• Complementary to 2SA1587
• Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
120
120
5
100
20
100
125
−55~125
V
V
V
mA
mA
mW
°C
°C
JEDEC
―
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEITA
TOSHIBA
SC-70
2-2E1A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 0.006 g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
Test Condition
ICBO
IEBO
VCB = 120 V, IE = 0
VEB = 5 V, IC = 0
hFE
(Note)
VCE = 6 V, IC = 2 mA
VCE (sat)
fT
Cob
NF
IC = 10 mA, IB = 1 mA
VCE = 6 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
RG = 10 kΩ
Note: hFE classification GR (G): 200~400, BL (L): 350~700
Marking
Min Typ. Max Unit
⎯ ⎯ 0.1 μA
⎯ ⎯ 0.1 μA
200 ⎯ 700
⎯ ⎯ 0.3 V
⎯ 100 ⎯ MHz
⎯ 3.0 ⎯ pF
⎯ 1.0 10 dB
1 2007-11-01
