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Toshiba Electronic Components Datasheet

C3803 Datasheet

Silicon NPN Epitaxial Type Transistor

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC3803
High Frequency Amplifier Applications
Video Amplifier Applications
High Speed Switching Applications
2SC3803
Unit: mm
High transition frequency: fT = 200 MHz (typ.)
Low collector output capacitance: Cob = 3.5 pF (typ.)
Complementary to 2SA1483
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Continuous collector current
Continuous base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
PC
(Note 1)
Tj
Tstg
60
45
5
200
50
500
1000
150
55 to 150
V
V
V
mA
mA
mW
°C
°C
PW-MINI
JEDEC
JEITA
SC-62
TOSHIBA
2-5K1A
Weight: 0.05 g (typ.)
Note 1: Mounted on a ceramic substrate (250 mm2 × 0.8 t)
Note 2:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly
even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute
maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2009-12-21


Toshiba Electronic Components Datasheet

C3803 Datasheet

Silicon NPN Epitaxial Type Transistor

No Preview Available !

Electrical Characteristics (Ta = 25°C)
2SC3803
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Input impedance (real part)
Collector output capacitance
Symbol
Test Condition
Min Typ. Max Unit
ICBO
VCB = 45 V, IE = 0
― ― 0.1 μA
IEBO
VEB = 5 V, IC = 0
― ― 0.1 μA
hFE (1)
(Note 3)
VCE = 1 V, IC = 10 mA
40 240
hFE (2)
VCE = 3 V, IC = 200 mA
20 ― ―
VCE (sat) IC = 100 mA, IB = 10 mA
― ― 0.3 V
VBE (sat) IC = 100 mA, IB = 10 mA
― ― 1.0 V
fT VCE = 10 V, IC = 10 mA
100 200 MHz
Re (hie) VCE = 10 V, IE = 10 mA, f = 200 MHz
120 Ω
Cob VCB = 10 V, IE = 0, f = 1 MHz
3.5 5.0 pF
Turn-on time
Switching time Storage time
Fall time
ton
OUTPUT
40
INPUT 680
tstg
0
10 V
VCC
250
ns
1 μS
VBB = 12 V
= 3 V
tf DUTY CYCLE 2%
30
Note 3: hFE (1) classification R: 40 to 80, O: 70 to 140, Y: 120 to 240
Marking
V
Lot No.
Part No. (or abbreviation code)
Characteristics indicator
Note 4
Note 4: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21


Part Number C3803
Description Silicon NPN Epitaxial Type Transistor
Maker Toshiba
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C3803 Datasheet PDF






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