C3673 - 2SC3673

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Toshiba

Datasheet Details

Part number	C3673
Manufacturer	Toshiba
File Size	144.34 KB
Description	2SC3673
Datasheet	C3673 Datasheet
Additional preview pages of the C3673 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC3673 Switching Applications Solenoid Drive Applications 2SC3673 Unit: mm • High DC current gain : hFE = 500 (min) (IC = 400 mA) • Low collector-emitter saturation voltage : VCE (sat) = 0.5 V (max) (IC = 300 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 40 V Emitter-base voltage VEBO 7 V Collector current IC 2 A Base current IB 0.5 A Collector power dissipation PC 1000 mW JEDEC ― Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEITA TOSHIBA ― 2-7D101A Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight: 0.

Published: Jun 8, 2015 |