C3669 Overview
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC3669 Power Amplifier Applications Power Switching Applications 2SC3669 Unit: mm Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A) High-speed switching:.
C3669 Details
| Part number | C3669 |
|---|---|
| Datasheet | C3669-Toshiba.pdf |
| File Size | 143.80 KB |
| Manufacturer | Toshiba |
| Description | 2SC3669 |
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