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Toshiba Electronic Components Datasheet

C3669 Datasheet

2SC3669

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SC3669
Power Amplifier Applications
Power Switching Applications
2SC3669
Unit: mm
Low collector saturation voltage: VCE (sat) = 0.5 V (max) (IC = 1 A)
High-speed switching: tstg = 1.0 μs (typ.)
Complementary to 2SA1429
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
IB
PC
Tj
Tstg
80
80
5
2
1
1000
150
55 to 150
V
V
V
A
A
mW
°C
°C
JEDEC
JEITA
TOSHIBA
2-7D101A
Note1: Using continuously under heavy loads (e.g. the application of high
Weight: 0.2 g (typ.)
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating
conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
1 2009-12-21


Toshiba Electronic Components Datasheet

C3669 Datasheet

2SC3669

No Preview Available !

Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
Test Condition
ICBO
VCB = 80 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 mA, IB = 0
hFE (1)
(Note 2)
VCE = 2 V, IC = 0.5 A
hFE (2)
VCE (sat)
VCE = 2 V, IC = 1.5 A
IC = 1 A, IB = 0.05 A
VBE (sat) IC = 1 A, IB = 0.05 A
fT VCE = 2 V, IC = 0.5 A
Cob VCB = 10 V, IE = 0, f = 1 MHz
Turn-on time
ton
20 μs
Input IB1
Output
Switching time Storage time
Fall time
tstg IB2
VCC = 30 V
tf IB1 = 0.05 A,IB2 = 0.05 A
duty cycle 1%
Note 2: hFE (1) classification O: 70 to 140, Y: 120 to 240
Marking
2SC3669
Min Typ. Max Unit
― ― 1.0 μA
― ― 1.0 μA
80 ― ―
V
70 240
40 ― ―
0.15 0.5
V
0.9 1.2
V
100 MHz
30 pF
0.2
1.0
μs
0.2
C3669
Characteristics
indicator
Part No. (or abbreviation code)
Lot No.
Note 3
Note 3: A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS
compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27
January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
2 2009-12-21


Part Number C3669
Description 2SC3669
Maker Toshiba
PDF Download

C3669 Datasheet PDF






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