C2290 Description
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2290 2SC2290 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (LOW SUPPLY VOLTAGE USE) l Specified 12.5V, 28MHz Characteristics l Output Power : Po = 60WPEP (Min.) l Power Gain : Gp = 11.8dB (Min.) l Collector Efficiency.
C2290 Key Features
- Specified 12.5V, 28MHz Characteristics
- Output Power : Po = 60WPEP (Min.)
- Power Gain : Gp = 11.8dB (Min.)
- Collector Efficiency : ηC = 35% (Min.)
- Intermodulation Distortion: IMD = −30dB (Max.) MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Collector-Base Vol