• Part: C2229
  • Description: Silicon NPN Transistor
  • Category: Transistor
  • Manufacturer: Toshiba
  • Size: 114.00 KB
Download C2229 Datasheet PDF
Toshiba
C2229
2SC2229 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process) 2SC2229 Black and White TV Video Output Applications High-Voltage Switching Applications Driver Stage Audio Amplifier Applications Unit: mm - High breakdown voltage: VCEO = 150 V (min) - Low output capacitance: Cob = 5.0 p F (max) - High transition frequency: f T = 120 MHz (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO VCEO VEBO IC IB PC Tj Tstg 50 m A 20 m A 800 m W °C - 55 to 150 °C JEDEC TO-92MOD JEITA ― TOSHIBA 2-5J1A Weight: 0.36 g (typ.) Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability...