BU208 - Silicon NPN Transistor

Toshiba

Key Features

. High Voltage : V CES =1500V . Low Saturation Voltage : Vc E ( sa t)=5V (Max. ).
Fall Time.
tf=0.7^s (Typ. ) . Glass Passivated Base-Collector Junction.

BU208 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	BU208
Manufacturer	Toshiba
File Size	80.64 KB
Description	Silicon NPN Transistor
Datasheet	BU208 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: BU208 3A SILICON IMPN TRIPLE DIFFUSED MESA TYPE COLOR TV HORIZONTAL OUTPUT APPLICATIONS. COLOR TV SWITCHING REGULATOR APPLICATIONS. FEATURES . High Voltage : V CES =1500V . Low Saturation Voltage : Vc E ( sa t)=5V (Max.) • Fall Time •* tf=0.7^s (Typ.) . Glass Passivated Base-Collector Junction MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Voltage Emitter-Base Voltage Collector Current DC Peak Base Current (Peak) Total Power Dissipation (Tc^95°C) Junction Temperature Storage Temperature Range Thermal Resistance SYMBOL VCES Vebo ic ICM iBM Ptot T J T stg R th(j-c) RATING 1500 5 5 7.5 4 12.5 +115 -65-115 1.6 Unit in mm 025.OMAX. 2*2 1. MAX. tr --<=& + 0.09 01.0-0.03 (L 30.2 ±0.2 i&9±a.2 UNIT V V A A A W °C °C °c/w +ao8 04.0—a 15 2-^ 1-^5 21 4 0.0 MAX.