Datasheet Summary
BD136 BD138
IBD140I
SILICON PNP EPITAXIAL TYPE (PCT PROCESS)
MEDIUM POWER AMPLIFIER APPLICATIONS.
Features
. Designed for plementary Use with BD135, BD137 and BD139
7.9 MAX.
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
SYMBOL
Collector-Base Voltage
BD136 BD138 BD140
VCBO
Collector-Emitter Voltage
BD136 BD138 BD140
Emitter-Base Voltage
Collector Current
DC Peak
Collector Power Dissipation
Ta=25°C Tc^60°C
VcEO
VEBO ic ICM
Junction Temperature
Storage Temperature Range
L stg
RATING -45 -60 -80 -45 -60 -80 -5
-0.5 -1.5
6.5 150
-55-150
UNIT...
