B1667 - Silicon PNP Triple Diffused Type Transistor

Toshiba

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B1667 silicon pnp triple diffused type transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	B1667
Manufacturer	Toshiba
File Size	177.47 KB
Description	Silicon PNP Triple Diffused Type Transistor
Datasheet	B1667 Datasheet

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TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SB1667(SM) 2SB1667(SM) Audio Frequency Power Amplifier Applications Unit: mm • Low saturation voltage: VCE (sat) = −1.7 V (max) (IC = −3 A, IB = −0.3 A) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC −60 −60 −7 −3 −0.5 1.5 25 V V V A A W Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA ― ― Note1: Using continuously under heavy loads (e.g. the application of high TOSHIBA 2-10S2A temperature/current/voltage and the significant change in temperature, etc.