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B1457. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Transistor Silicon PNP Epitaxial Type (Darlington) 2SB1457 Micro Motor Drive, Hammer Drive Applications Power Switching Applications Power Amplifier Applications ...
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pplications Power Switching Applications Power Amplifier Applications 2SB1457 Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = −2 V, IC = −1 A) • Low saturation voltage: VCE (sat) = −1.5 V (max) (IC = −1 A, IB = −1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current Base current Collector power dissipation Junction temperature Storage temperature range VCBO −100 V VCEO −100 V VEBO −8 V IC (DC) −2 A IC (Pulse) −3 A IB −0.5 A PC 900 mW Tj 150 °C Tstg −55 to 150 °C JEDEC TO-92MOD JEITA ― TO
B1457 Datasheet
