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2SB1018A
TOSHIBA Transistor
Silicon NPN Triple Diffused Type (PCT Process)
2SB1018A
High Current Switching Applications Power Amplifier Applications
Unit: mm
• • •
High collector current: IC = −7 A Low collector saturation voltage: VCE (sat) = −0.5 V (max) (IC = −4 A) Complementary to 2SD1411A
Absolute Maximum Ratings (Tc = 25°C)
Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Ta = 25°C Tc = 25°C Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating −100 −80 −5 −7 −1 2.0 30 150 −55 to 150 Unit V V V A A W °C °C
JEDEC JEITA TOSHIBA
― ― 2-10R1A
Weight: 1.7 g (typ.) Note: Using continuously under heavy loads (e.g.
B1018A Datasheet
