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A2184. For precise diagrams, and layout, please refer to the original PDF.
TOSHIBA Transistor Silicon PNP Triple Diffused Type 2SA2184 High Voltage Switching Applications • High voltage: VCEO = -550 V • High speed: tf = 40 ns (typ.) (IC = -0.5 A...
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gh voltage: VCEO = -550 V • High speed: tf = 40 ns (typ.) (IC = -0.5 A) 2SA2184 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO -550 V Collector-emitter voltage VCEO -550 V Emitter-base voltage VEBO -7 V Collector current DC Pulse IC ICP -1 A -2 Base current IB -1 A Collector power dissipation Ta = 25°C Tc = 25°C Junction temperature Storage temperature range PC Tj Tstg 1 20 150 -55 to 150 W °C °C JEDEC JEITA ― ― TOSHIBA 2-7J1A Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in Weight
A2184 Datasheet
