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A1145 - Transistor

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Datasheet Details

Part number A1145
Manufacturer Toshiba
File Size 132.74 KB
Description Transistor
Datasheet download datasheet A1145 Datasheet

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Part Number Description
A1182 2SA1182

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1145 Audio Frequency Amplifier Applications • Complementary to 2SC2705. • Small Collector Output Capacitance: Cob = 2.5 pF (typ.) • High Transition Frequency: fT = 200 MHz (typ.) 2SA1145 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO −150 V Collector-emitter voltage VCEO −150 V Emitter-base voltage VEBO −5 V Collector current IC −50 mA Base current IB −5 mA Collector power dissipation PC 800 mW Junction temperature Storage temperature range Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TO-92MOD ― Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
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