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74HC21D - Dual 4-Input AND Gate

General Description

2.

The 74HC21D is a high speed CMOS 4-INPUT AND GATE fabricated with silicon gate C2MOS technology.

It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.

Key Features

  • (1) Wide operating temperature range: Topr = -40 to 125.
  • (Note 1) (2) High speed: tpd = 10 ns (typ. ) at VCC = 5 V (3) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25.
  • (4) Balanced propagation delays: tPLH ≈ tPHL (5) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V Note 1: Operating Range spec of Topr = -40.
  • to 125.
  • is applicable only for the products which manufactured after July 2020. 4. Packaging SOIC14 ©2016-2020 1 Toshiba Electronic Devices & Storage Corpora.

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Datasheet Details

Part number 74HC21D
Manufacturer Toshiba
File Size 209.54 KB
Description Dual 4-Input AND Gate
Datasheet download datasheet 74HC21D Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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CMOS Digital Integrated Circuits Silicon Monolithic 74HC21D 74HC21D 1. Functional Description • Dual 4-Input AND Gate 2. General The 74HC21D is a high speed CMOS 4-INPUT AND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation. The internal circuit is composed of 4 stages including buffer an output, which provide high noise immunity and stable output. All inputs are equipped with protection circuits against static discharge or transient excess voltage. 3. Features (1) Wide operating temperature range: Topr = -40 to 125 � (Note 1) (2) High speed: tpd = 10 ns (typ.) at VCC = 5 V (3) Low power dissipation: ICC = 1.