74HC03D Datasheet, Toshiba

(1) High speed: tpz = 5 ns (typ.) at VCC = 5 V (2) Low power dissipation: ICC = 1.0 µA (max) at Ta = 25  (3) Wide operating voltage range: VCC(opr) = 2.0 to 6.0 V (4) Op.

* Quad 2-Input NAND Gate (Open Drain) 2. General The 74HC03D is a high speed CMOS 2-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low pow.