3SK115 - Silicon N-Channel Transistor

Toshiba

Key Features

. Superior Cross Modulation Pe rf ormance . Low Crss : C rss =0.03pF . Low Noise : NF=3.2dB.
S Q6 0.3 U M£LaJ 9.8 MI N. 3 y^O.75 "||. "0-6 5 CO' 2.

3SK115 silicon n-channel transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	3SK115
Manufacturer	Toshiba
File Size	107.33 KB
Description	Silicon N-Channel Transistor
Datasheet	3SK115 Datasheet

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Other Datasheets by Toshiba

Part Number	Description
3SK114	Silicon N-Channel Transistor
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3SK22	Silicon N-Channel Transistor

Full PDF Text Transcription (Reference)

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3SK115 SILICON N CHANNEL DUAL GATE MOS TYPE TV TUNER, UHF RF AMPLIFIER APP LICATION. Unit in mm 4 FEATURES . Superior Cross Modulation Pe rf ormance . Low Crss : C rss =0.03pF . Low Noise : NF=3.2dB •S Q6 0.3 U M£LaJ 9.8 MI N. 3 y^O.75 "||."0-6 5 CO' 2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gatel-Source Voltage Gate2-Source Voltage Drain Current Power Dissipation Channel Temperature Storage Temperature Range SYMBOL VDS vgis VG2S id Pd Teh T stg ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC SYMBOL Gatel Leakage Current IG1SS Gate2 Leakage Current IG2SS Drain Source Voltage V(BR)DSX RATING UNIT 15 V ±8 V ±8 V 30 mA 200 mW 125 °C -55- +125 °C S| c> J- 1 1 4 .2 MA> c5 1. QATK I 2. SOURCE 3. DRA I N 4. GATE 2 .