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GT30J301
TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT
GT30J301
HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS
Unit: mm
l The 3rd Generation
l Enhancement−Mode
l High Speed
: tf = 0.30µs (Max.)
l Low Saturation Voltage : VCE (sat) = 2.7V (Max.)
l FRD included between Emitter and Collector
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
Collector−Emitter Voltage
Gate−Emitter Voltage
DC Collector Current
1ms
Emitter−Collector Forward
DC
Current
1ms
Collector Power Dissipation (Tc = 25°C)
Junction Temperature
Storage Temperature Range
SYMBOL
VCES VGES
IC ICP IF IFM
PC
Tj Tstg
RATING
600 ±20 30 60 30 60
155
150 −55~150
EQUIVALENT CIRCUIT
UNIT
V V A A A A
W
°C °C
JEDEC JEITA TOSHIBA
Weight: 4.
30J301 Datasheet
