2SK355
2SK355 is N-Channel Transistor manufactured by Toshiba.
FEATURES
. Low Drain-Source ON Resistance : RDS(0N) = 0.12O(Typ. . High Forward Transfer Admittance : 1 Yf s | =6S(Typ. . Low Leakage Current : l GSS =il0 °n A(Max. ) @ Vq$=±20V
. Enhancement -Mode
I DSS=lm A(Max.) @ VD S=150V
: Vfh=l . 5 ~ 3. 5V @ l Q=lm A
INDUSTRIAL APPLICATIONS Unit in mm
^2&0MAX.
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC Drain-Source Voltage
SYMBOL VDSX
RATING 150
UNIT
Gate-Source Voltage
Vg SS
±20
Drain Current
DC Pulse
Drain Power Dissipation (Tc=25°C)
Channel Temperature
Storage Temperature Range
ID Idp
Teh T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
12 40 120
-65-150
1. GATE 2. SOURCE
DRAIN (CASE)
JEDEC
TO-204MA/TO-3
TC-3 , TB-3
°C TOSHIBA
2-21 El
Weight : 15.1
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX. UNIT
Gate Leakage...
