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2SD798 - NPN Transistor

Key Features

  • High DC Current Gain : hFE=1500 (Min. )(V CE=2V, I C=2A).

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Datasheet Details

Part number 2SD798
Manufacturer Toshiba
File Size 118.25 KB
Description NPN Transistor
Datasheet download datasheet 2SD798 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) . 2SD798 IGNITER APPLICATIONS. HIGH VOLTAGE SWITCHING APPLICATIONS. FEATURES • High DC Current Gain : hFE=1500 (Min.)(V CE=2V, I C=2A) INDUSTRIAL APPLICATIONS Unit in mm IQ.SMAX., ,03.6±a.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range SYMBOL VCBO v CEO v EBO ic IB PC T J Tstg RATING UNIT 600 V 300 V 5V 6A 1A 30 W 150 -55^150 °C °C 2.54 2.54 d P' J-. ?c X ^ . L BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER EQUIVALENT CIRCUIT =s2kn ! COLLECTOR EMITTER TO — 220 AI SC — 46 2 — 10A 1 A Mounting Kit No. AC75 Weight : 1.