2SD634 - NPN Transistor

Toshiba

Features

High DC Current Gain : h FE=2000 (Min. ) (VcE=3V, Ic=3A).
Low Saturation Voltage : v CE(sat) =1 - 5v (Max. ), (I C =3A).
Complementary to 2SB673, 2SB674, and 2SB675,.

2SD634 npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SD634
Manufacturer	Toshiba
File Size	134.33 KB
Description	NPN Transistor
Datasheet	2SD634 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: 2SD633 2SD634 I2SD635I SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER) HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. FEATURES • High DC Current Gain : h FE=2000 (Min.) (VcE=3V, Ic=3A) • Low Saturation Voltage : v CE(sat) =1 - 5v (Max.), (I C =3A) • Complementary to 2SB673, 2SB674, and 2SB675, INDUSTRIAL APPLICATIONS Unit in mm MAXIMUM RATINGS CHARACTERISTIC SYMBOL RATING Collector-Base 2SD633 100 Voltage 2SD634 2SD635 'CBO 80 60 Collector- Emitter 2SD633 100 Voltage 2SD634 Emitter-Base Voltage 2SD635 Continuous Collector Current Contunuous Base Current Collector Power Dissipation (Tc=25°c: Junction Temperature CEO VEBO ic IB PC 80 60 0.2 40 150 Storage Temperature Range Tstg -55VL50 UNIT °C EQUIVALENT CIRCUIT .