2SD1409 transistor equivalent, silicon npn transistor.
. High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic Construction with Built-in 3ase-Emitter
Shunt Resistor.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
.
HIGH VOLTAGE SWITCHING APPLICATIONS.
FEATURES . High DC Current Gain : hFE=600(Min. ) ( V CE=2V, I C=2A) . Monolithic C.
Image gallery
TAGS
Download (Size : 91.70KB)