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2SD1406 - Silicon NPN Transistor

Features

  • . High DC Current Gain : hpE=300(Max. ) (V CE=5V, I c=0.
  • 5A) . Low Saturation Voltage ' VCE (sat)=l-0V(Max. )(I c=3A, I B=0.3A) . High Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SB1015.

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Datasheet Details

Part number 2SD1406
Manufacturer Toshiba
File Size 92.67 KB
Description Silicon NPN Transistor
Datasheet download datasheet 2SD1406 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN TRIPLE DIFFUSED TYPE AUDIO FREQUENCY POWER AMPLIFIER APPLICATIONS. Unit in mm FEATURES . High DC Current Gain : hpE=300(Max. ) (V CE=5V, I c=0 • 5A) . Low Saturation Voltage ' VCE (sat)=l-0V(Max.)(I c=3A, I B=0.3A) . High Power Dissipation : Pc=25W (Tc=25°C) . Complementary to 2SB1015 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Power Dissipation Ta=25°C Tc=25°C SYMBOL [ RATING VcBO 60 v CEO 60 VeBO 7 ic 3 IB 0.5 2.0 ?C 25 UNIT V V V A A W Junction Temperature Storage Temperature Range T.i 150 °C T stg -55~150 °C ELECTRICAL CHARACTERISTICS (Ta=25 C) 10.3MAX. 7.Q 03.2±O.2 / - i Vf d Irf • "rf CO U n to Hi : Mill 1.2 S5 II 1.
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