Datasheet Summary
SILICON NPN EPITAXIAL TYPE (PCT PROCESS)
(INDUSTRIAL APPLICATIONS)
2SC979 2SC979A
HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLIATIONS.
Features
- High Breakdown Voltage : VCEO=70V(2SC979A)
- Low Saturation Voltage
: VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA
- High Transition Frequency
: f T=250MHz (Typ.) at VCE=10V, I c=10mA
- Low Output Capacitance : Cob=3pF (Typ.)
- plementary to 2SA499.
Unit in mm
05.8MAX. 04.95MAX
^0.45
°1 >rf
2(2.54
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SC979 2SC979A
Collector- Emitter Voltage Emitter-Base Voltage
2SC979 2SC979A
Collector Current
Base Current
Collector Power Dissipation
Junction...