Part 2SC979
Description SILICON NPN TRANSISTOR
Category Transistor
Manufacturer Toshiba
Size 116.85 KB
Toshiba

2SC979 Overview

Key Features

  • High Breakdown Voltage : VCEO=70V(2SC979A)
  • Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA
  • High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA
  • Low Output Capacitance : Cob=3pF (Typ.)