2SC979 Description
SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLIATIONS.
2SC979 Key Features
- High Breakdown Voltage : VCEO=70V(2SC979A)
- Low Saturation Voltage
- High Transition Frequency
- Low Output Capacitance : Cob=3pF (Typ.)
- plementary to 2SA499
- TC 7 , TB
- Base-Emitter Saturation Voltage vBE(sat) Ic=10mA, lB=lmA
- Transition Frequency
- OUTPUT
- 1.0 yA 1.0