2SC979
2SC979 is SILICON NPN TRANSISTOR manufactured by Toshiba.
FEATURES
- High Breakdown Voltage : VCEO=70V(2SC979A)
- Low Saturation Voltage
: VCE(sat)=0.05V (Typ.) at I C=10m A, I B=lm A
- High Transition Frequency
: f T=250MHz (Typ.) at VCE=10V, I c=10m A
- Low Output Capacitance : Cob=3p F (Typ.)
- plementary to 2SA499.
Unit in mm
05.8MAX. 04.95MAX
^0.45
°1 >rf
2(2.54
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
Collector-Base Voltage
2SC979 2SC979A
Collector- Emitter Voltage Emitter-Base Voltage
2SC979 2SC979A
Collector Current
Base Current
Collector Power Dissipation
Junction Temperature Storage Temperature Range
SYMBOL v CBO
'CEO VEBO ic IB PC
Tstg
RATING 70
100 50 70
100 20
300 175 -65^175
UNIT
1. EMITTER
2. BASE
3. GOLLECTOR(CASE) m A
JEDED
TO' m A m W EIAJ
- TC 7 , TB
-...
