2SC979 - SILICON NPN TRANSISTOR

Toshiba

Key Features

High Breakdown Voltage : VCEO=70V(2SC979A).
Low Saturation Voltage : VCE(sat)=0.05V (Typ. ) at I C=10mA, I B=lmA.
High Transition Frequency : f T=250MHz (Typ. ) at VCE=10V, I c=10mA.
Low Output Capacitance : Cob=3pF (Typ. ).
Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 >rf 2(2.54.

2SC979 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC979
Manufacturer	Toshiba
File Size	116.85 KB
Description	SILICON NPN TRANSISTOR
Datasheet	2SC979 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON NPN EPITAXIAL TYPE (PCT PROCESS) (INDUSTRIAL APPLICATIONS) 2SC979 2SC979A HIGH FREQUENCY AMPLIFIER APPLICATIONS. HIGH SPEED SWITCHING APPLIATIONS. FEATURES • High Breakdown Voltage : VCEO=70V(2SC979A) • Low Saturation Voltage : VCE(sat)=0.05V (Typ.) at I C=10mA, I B=lmA • High Transition Frequency : f T=250MHz (Typ.) at VCE=10V, I c=10mA • Low Output Capacitance : Cob=3pF (Typ.) • Complementary to 2SA499. Unit in mm 05.8MAX. 04.95MAX ^0.45 °1 >rf 2(2.