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SILICON NPN EPITAXIAL PLANAR TYPE
2 - 30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS. (LOW SUPPLY VOLTAGE USE)
FEATURES . Specified 12.5V, 28MHz Characteristics
: Output Power : P o =10WpeP : Minimum Gain : Gpe = 14dB : Efficiency : ? c =35%(Min. : Intermodulation Distortion : IMD=-30dB(Max.
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCES VCEO VEBO ic PC
Tstg
RATING 40 40 18
20 150
-55 ~150
UNIT
Unit in mm
^6 10. 3 MAX jZ)3.6±ag
;
1.5 MAX
I
<
2.54
2.54
OJ
e i
123
"U
1. BASE 2. COLLECTOR (HEAT SINK) 3. EMITTER
T0-220AB
TOSHIBA
2— 10A1B
Weight : 1.
2SC2509 Datasheet
