2SC2270 - Silicon NPN Transistor

Toshiba

Key Features

High DC Current Gain : hFE=140^450 (V CE=2V, I C=0.5A) hFE=70 (Min. )(VCE=2V, I C=4A).
Low Saturation Voltage : v CE(sat) =1 - 0V (Max -) (Ic=4A » Ib =0 - 1A ).
High Collector Power Dissipation : P C=10W (Tc=25°C), Pc-l. OW (Ta=25°C).

2SC2270 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2270
Manufacturer	Toshiba
File Size	87.95 KB
Description	Silicon NPN Transistor
Datasheet	2SC2270 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL TYPE (PCT PROCESS) 2SC2270 STROBO FLASH APPLICATIONS. MEDIMUM POWER AMPLIFIER APPLICATIONS. FEATURES • High DC Current Gain : hFE=140^450 (V CE=2V, I C=0.5A) hFE=70 (Min.)(VCE=2V, I C=4A) • Low Saturation Voltage : v CE(sat) =1 - 0V (Max -) (Ic=4A » Ib =0 - 1A ) • High Collector Power Dissipation : P C=10W (Tc=25°C), Pc-l.OW (Ta=25°C) MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector DC Current Pulsed (Note 1) Emitter Current DC Pulsed (Note 1) Collector Power Ta=25°C Dissipation Tc=25°C Junction Temperature Storage Temperature Range Note 1 : Pulse Test : Pulse Width = 10ms (Max.) Duty Cycle = 30 % (Max.