2SB595 transistor equivalent, silicon pnp transistor.
* High Breakdown Voltage : VCEO=-100V
* Low Collector-Emitter Saturation Voltage
: VCE(sat)=-2.0V(Max.)
* Complementary to 2SD525.
* Recommended for 30W H.
FEATURES
* High Breakdown Voltage : VCEO=-100V
* Low Collector-Emitter Saturation Voltage
: VCE(sat)=-2.0V(Max.
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