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RF Transistor

2SB554 Toshiba

2SB554 PNP Transistor

2SB554 Avg. rating / M : star-14

datasheet Download

2SB554 Datasheet

Features and benefits


• High Power Dissipation
• High Breakdown Voltage : P c = 150W VcEO = -180V
• Complementary tc/2SD424.
• Recommended for 100W High-Fiderity Audio Fre.

Application

FEATURES
• High Power Dissipation
• High Breakdown Voltage : P c = 150W VcEO = -180V
• Complementary tc.

Image gallery

2SB554 2SB554

TAGS
2SB554
PNP
Transistor
2SB550
2SB551
2SB552
Toshiba
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